Structural and electrical studies on nanostructured InSe thin films
Identifieur interne : 000484 ( Main/Repository ); précédent : 000483; suivant : 000485Structural and electrical studies on nanostructured InSe thin films
Auteurs : RBID : Pascal:13-0214424Descripteurs français
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- concept : Composé minéral.
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Abstract
InSe powder was found to be polycrystalline with hexagonal system. X-ray diffraction and scanning electron microscopy results confirmed that the InSe films have nanostructure nature. The heat treatment enhance the crystallite size. The dark electrical conductivity of InSe films showed that the dominant conduction is through the extended states in the temperature range 293-473 K. Thermoelectric properties show a negative sign exhibiting n-type semiconductig nature of films. Current density-voltage characteristics of InSe films showed Ohmic conduction in the lower voltage range, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps below the conduction band. The temperature dependence of the current density allowed the calculation of some essential parameters.
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Pascal:13-0214424Le document en format XML
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<author><name sortKey="Darwish, A A A" uniqKey="Darwish A">A. A. A. Darwish</name>
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<author><name sortKey="El Nahass, M M" uniqKey="El Nahass M">M. M. El-Nahass</name>
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<front><div type="abstract" xml:lang="en">InSe powder was found to be polycrystalline with hexagonal system. X-ray diffraction and scanning electron microscopy results confirmed that the InSe films have nanostructure nature. The heat treatment enhance the crystallite size. The dark electrical conductivity of InSe films showed that the dominant conduction is through the extended states in the temperature range 293-473 K. Thermoelectric properties show a negative sign exhibiting n-type semiconductig nature of films. Current density-voltage characteristics of InSe films showed Ohmic conduction in the lower voltage range, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps below the conduction band. The temperature dependence of the current density allowed the calculation of some essential parameters.</div>
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<fC01 i1="01" l="ENG"><s0>InSe powder was found to be polycrystalline with hexagonal system. X-ray diffraction and scanning electron microscopy results confirmed that the InSe films have nanostructure nature. The heat treatment enhance the crystallite size. The dark electrical conductivity of InSe films showed that the dominant conduction is through the extended states in the temperature range 293-473 K. Thermoelectric properties show a negative sign exhibiting n-type semiconductig nature of films. Current density-voltage characteristics of InSe films showed Ohmic conduction in the lower voltage range, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps below the conduction band. The temperature dependence of the current density allowed the calculation of some essential parameters.</s0>
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